features epitaxial planar die construction complementary npn types available built-in biasing resistors absolute maximum ratings @ 25 : symbol parameter min typ max unit v cc supply voltage --- 50 --- v v in input voltage -5 --- +12 v p d power dissipation --- 200 --- mw t j junction temperature --- 150 --- t stg storage temperature -55 --- 150 i o 100 i c(max) output current 100 ma electrical characteristics @ 25 : symbol parameter min typ max unit v i(off) --- --- 0.5 v v i(on) input voltage (v cc =5v, i o =100 - a) (v o =0.3v, i o =5ma) 1.1 --- --- v v o(on) output voltage (i o =5ma,i i =0.25ma) --- 0.1 0.3 v i i input current (v i =5v) --- --- 3.6 ma i o(off) output current (v cc =50v, v i =0) --- --- 0.5 - a g i dc current gain (v o =5v, i o =10ma) 80 --- --- r 1 input resistance 1.54 2.2 2.86 k ? r 2 /r 1 resistance ratio 17 21 26 f t transition frequency (v o =10v, i o =5ma, f=100mhz) --- 250 --- mhz sot-23 suggested solder pad layout .079 2.000 in ch es mm . 031 .800 .035 .900 . 037 .950 .037 .950 *marking: e42 epoxy meets ul 94 v-0 flammability rating moisure sensitivity level 1 2012- 0 willas electronic corp. npn digital transistor DTC123JCA dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
typical characteristics 2012- 0 willas electronic corp. npn digital transistor DTC123JCA 0.2 0.4 0.6 0.8 1.0 0.01 0.1 1 10 0.1 1 10 100 0.1 1 10 100 11 01 0 0 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 0481 21 62 0 0 2 4 6 8 10 0.1 1 10 100 1 10 100 1000 30 3 0.3 t a =100 t a =25 off characteristics 3 0.3 0.03 v cc =5v output current i 0 (ma) input voltage v i(off) (v) on characteristics t a =25 t a =100 v o =0.3v 3 0.3 30 output current i o (ma) input voltage v i(on) (v) 300 30 30 3 v o(on) ?? i o t a =25 t a =100 i o /i i =20 output voltage v o(on) (mv) output current i o (ma) DTC123JCA p d ?? t a power dissipation p d (mw) ambient temperature t a ( ) output capacitance c o (pf) f=1mhz t a =25 c o ?? v r reverse bias voltage v r (v) 30 t a =25 t a =100 v o =5v 300 3 3 0.3 30 g i ?? i o output current i o (ma) dc current gain g i
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